MRFE6VP5600H 600W 50V MOSFET Transistor
MRFE6VP5600H 600W NXP high-ruggedness LDMOS transistor, 50V. Rated for extreme VSWR exceeding 65:1 at 5dB compression. For broadcast and industrial RF applications where reliability under mismatch is non-negotiable.
Buy NowProduct Description
The MRFE6VP5600H is a 600W high-ruggedness LDMOS transistor from NXP Semiconductors, operating at 50V. Its "H" designation indicates extreme ruggedness, capable of withstanding VSWR exceeding 65:1 at 5dB compression without damage. This makes it ideal for broadcast transmitter output stages where antenna mismatch conditions can occur. Also suited for industrial RF heating, plasma generation, and other high-power RF applications. Genuine component.
Technical Specifications
| Part Number | MRFE6VP5600H |
|---|---|
| Power Output | 600W |
| Voltage | 50V |
| Ruggedness | High VSWR tolerant |
| Applications | Industrial, broadcast, plasma exciters |
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